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1
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S
0
1
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-
CPW3-1700S010–Silicon Carbide Schottky Diode Chip
Z-Rec?
RectifieR
Features
?
1700-Volt
Schottky
Rectifer
?
Zero
Reverse
Recovery
?
Zero
Forward
Recovery
?
High-Frequency
Operation
?
Temperature-Independent
Switching
Behavior
?
Extremely
Fast
Switching
?
Positive
Temperature
Coeffcient
on
VF
Chip Outline
Maximum Ratings
Symbol
Parameter
Value
Unit
Test Conditions
Note
VRRM
Repetitive
Peak
Reverse
Voltage
1700
V
VRSM
Surge
Peak
Reverse
Voltage
1700
V
VDC
DC
Blocking
Voltage
1700
V
IF(AVG)
Average
Forward
Current
10
A
TJ=175?C
IFRM
Repetitive
Peak
Forward
Surge
Current
40.5
22.5
A
TC=25?C,
tP=10
ms,
Half
Sine
Wave,
D=1
TC=110?C,
tP=10
ms,
Half
Sine
Wave,
D=1
1
IFSM
Non-Repetitive
Peak
Forward
Surge
Current
54
36.5
A
TC=25?C,
tP=10
ms,
Half
Sine
Wave,
D=1
TC=110?C,
tP=10
ms,
Half
Sine
Wave,
D=1
1
TJ
,
Tstg
Operating
Junction
and
Storage
Temperature
-55 to
+175
?C
Part Number
Anode
Cathode
Package
Marking
CPW3-1700S010B
Al
Ni/Ag
Sawn
on
Foil
Wafer
#
on
Foil
VRRM
= 1700 V
IF(AVG)
=
10
A
Qc
=
70
nC
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward
Voltage
1.7
3
2
3.5
V
IF
=
10A
TJ=25°C
IF
=
10
A
TJ=175°C
IR
Reverse
Current
10
50
50
200
μA
VR
= 1700 V T
J=25°C
VR
= 1700 V T
J=175°C
QC
Total
Capacitive
Charge
70
110
nC
VR
=
1700
V,
IF
=
10
A
di/dt
=
400
A/μs
TJ
= 25°C
C
Total
Capacitance
880
80
60
pF
VR
=
0
V,
TJ
=
25°C,
f
=
1
MHz
VR
=
200
V,
TJ
=
25?C,
f
=
1
MHz
VR
=
400
V,
TJ
=
25?C,
f
=
1
MHz
Note:
1.
Assumes
θJ-C
Thermal
Resistance
of
1.06?C/W
or
less.
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